1 elm34600aa - n 7 - complementary mosfet elm 3 4600a a - n uses advanced trench technology to provide excellent rds (on) and low gate charge. n-channel p-channel ? vds = 3 0v vds= - 3 0v ? id = 7 a id= -5 a ? rds ( on ) < 27. 5 m (vgs = 1 0 v) rds(on) < 4 5 m (vgs = - 1 0 v) ? rds(on) < 40 .0 m (vgs = 4.5 v ) rds(on) < 80 m (vgs = -4.5 v ) parameter symbol n-ch (max.) p-ch ( max.) unit note drain - s ource voltage vds 3 0 - 3 0 v gate - s ource v oltag e vgs 20 20 v conti nuous drain current ta = 25 c id 7 -5 a ta = 70 c 6 - 4 pulsed d rain current idm 2 0 - 2 0 a 3 power dissipation t c = 25 c pd 2.0 2.0 w t c = 70 c 1 . 3 1 . 3 j unction and storage temperature range t j , t s tg - 55 to 150 - 55 to 150 c s 2 g 2 d 2 s 1 g 1 d 1 g e neral description f eatures maximum a bsolute ratings thermal characteristics c ircuit ? n- ch ? p - ch parameter symbol device typ. max. unit note maximum junction - to - a mbient r ja n-ch 62.5 c /w maximum junction - to - a mbient r ja p -ch 62.5 c /w pin configuration so p - 8 (top vi ew) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 t a = 25 c . u nless otherwise noted. 4 3 2 1 5 6 7 8
2 electrical characteristics (n-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - s ource breakdown voltage bv ds s id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current id ss vds = 2 4 v, vgs = 0v 1 a vds = 2 0 v, vgs = 0v, t a = 55 c 10 gate - b ody leakage current igss vds = 0v, vgs = 20 v 100 n a gate t hreshold voltage vgs (th) vds = vg s , id = 25 0 a 1.0 1.5 2.5 v on s tate drain current i d (on ) vgs = 10 v, vds = 5v 2 0 a 1 static drain - s ource on - r esistance rds (on ) vgs = 10 v, id = 7 a 20.5 27.5 m 1 vgs = 4 .5v, id = 6 a 30.0 40. 0 forward transconductance gfs vds = 5v, id = 7 a 16 s 1 diode forward voltage vsd i f = 1a, vgs=0v 1 v 1 max.body - d iode c ontinuous c urrent is 1.3 a pulsed current ism 2.6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = 15v, f = 1mh z 680 pf output capacitance c oss 105 pf reverse transfer capacitance c r ss 75 pf switching parameters total gate charge q g vgs = 10 v, vds = 15v, id = 7 a 14.0 nc 2 gate - s ource charge q gs 1.9 nc 2 gate - d rain charge q gd 3.3 nc 2 turn - o n delay time td (on) vgs = 10 v, vds = 1 0 v , id = 1a rgen = 3 4.6 7.0 ns 2 turn - o n rise t ime t r 4.0 6.0 ns 2 turn - o ff delay time td ( of f ) 20.0 30.0 ns 2 turn - o ff fall t ime t f 5.0 8.0 ns 2 complem entary mosfet elm34600aa - n 7 - note : 1. p ulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. t a = 25 c . u nless otherwise noted.
3 elm34600aa - n 7 - complem entary mosfet typical electrical and thermal characteristics (n-ch) 4 dec-19-2005 n- & p-channel enhancement mode field effect transistor p5003qvg sop-8 lead-free niko-sem n-channel body diode forward voltage variation with source current and temperature 25 c t = 125 c v - body diode forward voltage(v) is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4
4 complem entary mosfet elm34600aa - n 7 - 5 dec-19-2005 n- & p-channel enhancement mode field effect transistor p5003qvg sop-8 lead-free niko-sem
5 complem entary mosfet elm34600aa - n 7 - electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - s ource breakdown voltage bv d ss id = - 25 0 a , vgs = 0v - 3 0 v zero g ate voltage drain current i ds s vds = - 2 4 v, vgs = 0v - 1 a vds = - 2 0 v, vgs = 0v, t a = 55 c -10 gate - b ody leakage current ig s s vds = 0v, vgs = 20 v 100 n a gate t hreshold voltage vgs (th) vds = vgs , id = - 25 0 a - 1.0 - 1. 5 - 2. 5 v on s tate drain current id (on ) vgs = - 10 v, vds = - 5v - 2 0 a 1 static drain - s ource on - r esistance rds (on ) vgs = - 10 v, id = -5 a 37.5 45.0 m 1 vgs = - 4 .5v, id = - 4 a 62.0 80.0 forward transconductance gfs vds = - 5v, id = - 5 a 13 s 1 diode forward voltage vsd i f = - 1a, vgs = 0 v - 1 v 1 max.body - d iode continuous c urrent is - 1.3 a pulsed current ism -2.6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = - 15v, f = 1mh z 780 pf output capacitance c oss 145 pf reverse transfer capacitance c r ss 79 pf switching parameters total gate charge q g vgs = - 10 v, vds = - 15v id = - 5 a 15.1 nc 2 gate - s ource charge q gs 2.1 nc 2 gate - d rain charge q gd 4.0 nc 2 turn - o n delay time td (on) vgs = - 10 v, vds = - 1 0 v id = - 1a, rgen = 3 7.7 11.5 ns 2 turn - o n rise t ime t r 5.7 8.5 ns 2 turn - o ff delay time td ( of f ) 20.0 30.0 ns 2 turn - o ff fall t ime t f 9.5 14.0 ns 2 note : 1. p ulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. t a = 25 c . u nless otherwise noted.
6 complem entary mosfet elm34600aa - n 7 - typical electrical and thermal characteristics (p-ch) 6 dec-19-2005 n- & p-channel enhancement mode field effect transistor p5003qvg sop-8 lead-free niko-sem p-channel body diode forward voltage variation wi th source current and temperature 25 c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 gs a t = 125 c 1.0 0.8 1.2 -55c 1.4
7 complem entary mosfet elm34600aa - n 7 - 7 dec-19-2005 n- & p-channel enhancement mode field effect transistor p5003qvg sop-8 lead-free niko-sem gate charge characteristics -v gs - gate-to-source voltage(v) qg -gate charge(nc) -15v -10v v ds = -5v i d = -5a 8 6 4 2 0 10 20 15 10 5 0 f=1 mhz v gs =0v capacitance(pf) capacitance characteristics ciss coss crss -v ds ,drain-to-source voltage(v) 1200 1000 800 600 400 200 0 20 15 10 5 0
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